Littelfuse IXFA72N20X3

Package / Case

TO-263-3

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

No

PPAP

No

Category

Power MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

200

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

72

Maximum Drain Source Resistance (MOhm)

20@10V

Typical Gate Charge @ Vgs (nC)

55@10V

Typical Gate Charge @ 10V (nC)

55

Typical Input Capacitance @ Vds (pF)

3780@25V

Maximum Power Dissipation (mW)

320000

Typical Fall Time (ns)

11

Typical Rise Time (ns)

28

Typical Turn-Off Delay Time (ns)

78

Typical Turn-On Delay Time (ns)

23

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

Surface Mount

Package Height

4.83(Max)

Package Width

9.4(Max)

Package Length

10.41(Max)

PCB changed

2

Tab

Tab

Standard Package Name

TO-263

Supplier Package

D2PAK

Lead Shape

Gull-wing

Vds - Drain-Source Breakdown Voltage

200 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

320 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Qg - Gate Charge

55 nC

Rds On - Drain-Source Resistance

20 mOhms

Id - Continuous Drain Current

72 A

Series

HiPerFET

Part Status

Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

Active

Technology

Si

Pin Count

a count of all of the component leads (or pins)

3

Configuration

Single

Number of Channels

1 Channel

Channel Type

N