EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
HTS
8541.29.00.95
Automotive
No
PPAP
No
Category
Power MOSFET
Process Technology
HiperFET
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
600
Maximum Gate Source Voltage (V)
±30
Maximum Gate Threshold Voltage (V)
5.5
Operating Junction Temperature (°C)
150
Maximum Continuous Drain Current (A)
10
Maximum Gate Source Leakage Current (nA)
100
Maximum IDSS (uA)
25
Maximum Drain Source Resistance (MOhm)
740@10V
Typical Gate Charge @ Vgs (nC)
32@10V
Typical Gate Charge @ 10V (nC)
32
Typical Gate to Drain Charge (nC)
10
Typical Gate to Source Charge (nC)
12
Typical Reverse Recovery Charge (nC)
320
Typical Input Capacitance @ Vds (pF)
1720@25V
Typical Reverse Transfer Capacitance @ Vds (pF)
14@25V
Minimum Gate Threshold Voltage (V)
3
Typical Output Capacitance (pF)
160
Maximum Power Dissipation (mW)
200000
Typical Fall Time (ns)
21
Typical Rise Time (ns)
27
Typical Turn-Off Delay Time (ns)
65
Typical Turn-On Delay Time (ns)
23
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Maximum Pulsed Drain Current @ TC=25°C (A)
25
Typical Gate Plateau Voltage (V)
5.9
Typical Reverse Recovery Time (ns)
120
Maximum Diode Forward Voltage (V)
1.5
Maximum Positive Gate Source Voltage (V)
30
Mounting
Surface Mount
Package Height
4.83(Max)
Package Width
9.4(Max)
Package Length
10.41(Max)
PCB changed
2
Tab
Tab
Standard Package Name
TO-263
Supplier Package
D2PAK
Lead Shape
Gull-wing
Part Status
Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.
Active
Pin Count
a count of all of the component leads (or pins)
3
Configuration
Single
Channel Type
N