EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
HTS
8541.29.00.95
Automotive
No
PPAP
No
Category
Power MOSFET
Process Technology
TrenchFET
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
200
Maximum Gate Source Voltage (V)
±15
Maximum Gate Threshold Voltage (V)
4.5
Maximum Continuous Drain Current (A)
120
Maximum Gate Source Leakage Current (nA)
200
Maximum IDSS (uA)
25
Maximum Drain Source Resistance (MOhm)
30@10V
Typical Gate Charge @ Vgs (nC)
740@10V
Typical Gate Charge @ 10V (nC)
740
Typical Input Capacitance @ Vds (pF)
73000@25V
Maximum Power Dissipation (mW)
1040000
Typical Fall Time (ns)
50
Typical Rise Time (ns)
85
Typical Turn-Off Delay Time (ns)
200
Typical Turn-On Delay Time (ns)
90
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
Through Hole
Package Height
26.16(Max)
Package Width
5.13(Max)
Package Length
19.96(Max)
PCB changed
3
Tab
Tab
Supplier Package
TO-264AA
MSL
-
Qualification
-
Continuous Drain Current Id
120A
Part Status
Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.
Active
Pin Count
a count of all of the component leads (or pins)
3
Configuration
Single
Power Dissipation
the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.
1.04kW
Channel Type
P