Material
Si
EU RoHS
Compliant with Exemption
HTS
8541.29.00.95
Automotive
No
PPAP
No
Category
Power MOSFET
Process Technology
HiperFET
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
200
Maximum Gate Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
180
Maximum Drain Source Resistance (MOhm)
12.5@10V
Typical Gate Charge @ Vgs (nC)
660@10V
Typical Gate Charge @ 10V (nC)
660
Typical Input Capacitance @ Vds (pF)
22000@25V
Maximum Power Dissipation (mW)
700000
Typical Fall Time (ns)
56
Typical Rise Time (ns)
85
Typical Turn-Off Delay Time (ns)
180
Typical Turn-On Delay Time (ns)
55
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
Screw
Package Width
25.42(Max)
Package Length
38.23(Max)
PCB changed
4
Supplier Package
SOT-227B
Part Status
Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.
NRND
Pin Count
a count of all of the component leads (or pins)
4
Configuration
Single Dual Source
Channel Type
N