Package / Case
TO-263AA-3
EU RoHS
Compliant
ECCN (US)
EAR99
HTS
8541.29.00.40
Automotive
No
PPAP
No
Category
Power MOSFET
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
1000
Maximum Gate Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
0.8(Min)
Maximum Drain Source Resistance (MOhm)
21000@0V
Typical Gate Charge @ Vgs (nC)
14.6@5V
Typical Input Capacitance @ Vds (pF)
325@25V
Maximum Power Dissipation (mW)
60000
Typical Fall Time (ns)
48
Typical Rise Time (ns)
57
Typical Turn-Off Delay Time (ns)
34
Typical Turn-On Delay Time (ns)
28
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
Surface Mount
Package Height
4.7(Max)
Package Width
9.4(Max)
Package Length
10.41(Max)
PCB changed
2
Tab
Tab
Supplier Package
D2PAK
Vds - Drain-Source Breakdown Voltage
1 kV
Vgs th - Gate-Source Threshold Voltage
2 V
Pd - Power Dissipation
60 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.
+ 150 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 55 C
Mounting Styles
SMD/SMT
Qg - Gate Charge
14.6 nC
Rds On - Drain-Source Resistance
21 Ohms
Id - Continuous Drain Current
800 mA
Packaging
Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.
Tape and Reel
Part Status
Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.
Active
Technology
Si
Pin Count
a count of all of the component leads (or pins)
3
Configuration
Single
Number of Channels
1 Channel
Channel Type
N