Littelfuse IXFH42N50P2

Package / Case

TO-247-3

EU RoHS

Compliant with Exemption

ECCN (US)

EAR99

HTS

8541.29.00.95

SVHC

Yes

SVHC Exceeds Threshold

Yes

Automotive

No

PPAP

No

Category

Power MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

500

Maximum Gate Source Voltage (V)

±30

Maximum Continuous Drain Current (A)

42

Maximum Drain Source Resistance (MOhm)

145@10V

Typical Gate Charge @ Vgs (nC)

92@10V

Typical Gate Charge @ 10V (nC)

92

Typical Input Capacitance @ Vds (pF)

5300@25V

Maximum Power Dissipation (mW)

830000

Typical Fall Time (ns)

9

Typical Rise Time (ns)

12

Typical Turn-Off Delay Time (ns)

42

Typical Turn-On Delay Time (ns)

23

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

Through Hole

Package Height

21.46(Max)

Package Width

5.3(Max)

Package Length

16.26(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-247

Vds - Drain-Source Breakdown Voltage

500 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

830 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Mounting Styles

Through Hole

Qg - Gate Charge

92 nC

Rds On - Drain-Source Resistance

145 mOhms

Id - Continuous Drain Current

42 A

Part Status

Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

Active

Technology

Si

Pin Count

a count of all of the component leads (or pins)

3

Configuration

Single Dual Drain

Number of Channels

1 Channel

Channel Type

N