SUD50P04-08-GE3

Vishay Intertechnologies SUD50P04-08-GE3

Part No:

SUD50P04-08-GE3

Package:

-

AINNX NO:

68716082-SUD50P04-08-GE3

Description:

Power Field-Effect Transistor, 50A I(D), 40V, 0.0081ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3

Products specifications
  • Factory Lead Time
    17 Weeks, 4 Days
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    2
  • Transistor Element Material
    SILICON
  • Exterior Housing Material
    1
  • Rohs Code
    Yes
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    VISHAY INTERTECHNOLOGY INC
  • Package Description
    HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
  • Drain Current-Max (ID)
    50 A
  • Operating Temperature-Max
    150 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE
  • Working temperature range
    -25…+65 °C
  • Completeness
    device; ring current sensor Ф14.5/ 32.5 mm; h - 12.5 mm
  • JESD-609 Code
    e3
  • ECCN Code
    EAR99
  • Type
    digital LED volt-ammeter DMS series (AD16-22VAM R)
  • Terminal Finish
    Matte Tin (Sn)
  • Color
    light color - red
  • Terminal Position
    SINGLE
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Depth
    51 mm
  • Reach Compliance Code
    compliant
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    P-CHANNEL
  • JEDEC-95 Code
    TO-252
  • Drain-source On Resistance-Max
    0.0081 Ω
  • Pulsed Drain Current-Max (IDM)
    100 A
  • DS Breakdown Voltage-Min
    40 V
  • Avalanche Energy Rating (Eas)
    106 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    73.5 W
  • Saturation Current
    1
  • Diameter
    display - 28.5 mm
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