Vishay Intertechnologies IRFU1N60APBF

Factory Lead Time

12 Weeks

Surface Mount

having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

NO

Number of Terminals

3

Transistor Element Material

SILICON

Exterior Housing Material

1

Type of module

IGBT

Semiconductor structure

transistor/transistor

Max. off-state voltage

1.2kV

Collector current

200A

Case

MiniSKiiP® 2

Electrical mounting

Press-Fit

Gate-emitter voltage

±20V

Pulsed collector current

400A

Mechanical mounting

screw

Rohs Code

Yes

Part Life Cycle Code

Active

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Drain Current-Max (ID)

1.4 A

Operating Temperature-Max

150 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

IN-LINE

JESD-609 Code

e3

ECCN Code

EAR99

Terminal Finish

MATTE TIN

Terminal Position

SINGLE

Terminal Form

Occurring at or forming the end of a series, succession, or the like; closing; concluding.

THROUGH-HOLE

Peak Reflow Temperature (Cel)

260

Reach Compliance Code

compliant

Time@Peak Reflow Temperature-Max (s)

30

JESD-30 Code

R-PSIP-T3

Qualification Status

An indicator of formal certification of qualifications.

Not Qualified

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

A phase of operation during the operation and maintenance stages of the life cycle of a facility.

ENHANCEMENT MODE

Case Connection

DRAIN

Topology

IGBT half-bridge,

Transistor Application

SWITCHING

Polarity/Channel Type

N-CHANNEL

JEDEC-95 Code

TO-251AA

Drain-source On Resistance-Max

7 Ω

Pulsed Drain Current-Max (IDM)

5.6 A

DS Breakdown Voltage-Min

600 V

Avalanche Energy Rating (Eas)

93 mJ

FET Technology

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs)

36 W

2nd Connector Number of Positions Loaded

for UPS,