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Vishay Intertechnologies SISH892BDN-T1-GE3
Part No:
SISH892BDN-T1-GE3
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Datasheet:
Package:
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AINNX NO:
68715890-SISH892BDN-T1-GE3
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Description:
Power Field-Effect Transistor,
Products specifications
- Factory Lead Time16 Weeks
- Rohs CodeYes
- Part Life Cycle CodeActive
- Ihs ManufacturerVISHAY INTERTECHNOLOGY INC
- Noal voltage12/24 (DC) Vmin
- Number of terals4, non-insulated blade terminal 6.3min
- ECCN CodeEAR99
- Typeconnector (socket) series 70413
- Terminal FinishPure Matte Tin (Sn) - annealed
- Peak Reflow Temperature (Cel)260
- Depth24.8 mm
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)40
- Saturation Current1
- Height13.8 (housing) mm
- Width27.7 (with flanges); 18.75 (housing) mm
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