SI3440DV-T1-GE3

Vishay Intertechnologies SI3440DV-T1-GE3

Part No:

SI3440DV-T1-GE3

Package:

-

AINNX NO:

68716032-SI3440DV-T1-GE3

Description:

Small Signal Field-Effect Transistor, 1.2A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193C, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    6
  • Transistor Element Material
    SILICON
  • Exterior Housing Material
    1
  • Rohs Code
    Yes
  • Part Life Cycle Code
    End Of Life
  • Ihs Manufacturer
    VISHAY INTERTECHNOLOGY INC
  • Package Description
    HALOGEN FREE AND ROHS COMPLIANT, TSOP-6
  • Drain Current-Max (ID)
    1.2 A
  • Operating Temperature-Max
    150 °C
  • Operating Temperature-Min
    -55 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE
  • JESD-609 Code
    e3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    compliant
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PDSO-G6
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL
  • JEDEC-95 Code
    MO-193C
  • Drain-source On Resistance-Max
    0.375 Ω
  • DS Breakdown Voltage-Min
    150 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    1.14 W
  • Saturation Current
    1
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