SIA461DJ-T1-GE3

Vishay Intertechnologies SIA461DJ-T1-GE3

Part No:

SIA461DJ-T1-GE3

Package:

-

AINNX NO:

68722241-SIA461DJ-T1-GE3

Description:

Description: Power Field-Effect Transistor, 12A I(D), 20V, 0.033ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-70, POWERPAK-6

Products specifications
  • Factory Lead Time
    16 Weeks
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • Exterior Housing Material
    1
  • Collector current
    100A
  • Case
    SEMITRANS2
  • Type of module
    IGBT
  • Semiconductor structure
    transistor/transistor
  • Max. off-state voltage
    1.7kV
  • Electrical mounting
    FASTON connectors,
  • Gate-emitter voltage
    ±20V
  • Pulsed collector current
    300A
  • Mechanical mounting
    screw
  • Rohs Code
    Yes
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    VISHAY INTERTECHNOLOGY INC
  • Package Description
    HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-70, POWERPAK-6
  • Drain Current-Max (ID)
    12 A
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    SQUARE
  • Package Style
    SMALL OUTLINE
  • JESD-609 Code
    e3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn) - annealed
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    NO LEAD
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    compliant
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    S-PDSO-N3
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Topology
    IGBT half-bridge
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    P-CHANNEL
  • Drain-source On Resistance-Max
    0.033 Ω
  • Pulsed Drain Current-Max (IDM)
    20 A
  • DS Breakdown Voltage-Min
    20 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • 2nd Connector Number of Positions Loaded
    for UPS,
  • Saturation Current
    1
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