Vishay Intertechnologies SISA12ADN-T1-GE3

Factory Lead Time

18 Weeks, 3 Days

Surface Mount

having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

YES

Number of Terminals

5

Transistor Element Material

SILICON

Exterior Housing Material

1

Type of module

IGBT

Semiconductor structure

transistor/transistor

Max. off-state voltage

1.2kV

Collector current

75A

Case

MiniSKiiP® 3

Electrical mounting

Press-Fit

Gate-emitter voltage

±20V

Pulsed collector current

150A

Mechanical mounting

screw

Rohs Code

Yes

Part Life Cycle Code

Active

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Drain Current-Max (ID)

25 A

Operating Temperature-Max

150 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

SQUARE

Package Style

SMALL OUTLINE

ECCN Code

EAR99

Terminal Position

DUAL

Terminal Form

Occurring at or forming the end of a series, succession, or the like; closing; concluding.

C BEND

Reach Compliance Code

unknown

JESD-30 Code

S-PDSO-C5

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

A phase of operation during the operation and maintenance stages of the life cycle of a facility.

ENHANCEMENT MODE

Case Connection

DRAIN

Topology

IGBT three-phase bridge,

Transistor Application

SWITCHING

Polarity/Channel Type

N-CHANNEL

Drain-source On Resistance-Max

0.0043 Ω

Pulsed Drain Current-Max (IDM)

80 A

DS Breakdown Voltage-Min

30 V

Avalanche Energy Rating (Eas)

11 mJ

FET Technology

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs)

28 W

2nd Connector Number of Positions Loaded

for UPS,