IRF740PBF

Vishay Intertechnologies IRF740PBF

Part No:

IRF740PBF

Package:

-

AINNX NO:

68722174-IRF740PBF

Description:

Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3

Products specifications
  • Factory Lead Time
    9 Weeks, 3 Days
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    NO
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • Exterior Housing Material
    1
  • Type of module
    diode-thyristor
  • Semiconductor structure
    double series
  • Max. off-state voltage
    1.6kV
  • Version
    A22
  • Case
    SEMIPACK1
  • Max. forward voltage
    1.75V
  • Max. forward impulse current
    2.25kA
  • Gate current
    100mA
  • Electrical mounting
    screw
  • Max. load current
    235A
  • Mechanical mounting
    screw
  • Rohs Code
    Yes
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    VISHAY INTERTECHNOLOGY INC
  • Part Package Code
    TO-220AB
  • Drain Current-Max (ID)
    10 A
  • Operating Temperature-Max
    150 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    FLANGE MOUNT
  • JESD-609 Code
    e3
  • Pbfree Code
    Yes
  • ECCN Code
    EAR99
  • Terminal Finish
    MATTE TIN
  • Terminal Position
    SINGLE
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    THROUGH-HOLE
  • Reach Compliance Code
    not_compliant
  • Pin Count

    a count of all of the component leads (or pins)

    3
  • JESD-30 Code
    R-PSFM-T3
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL
  • JEDEC-95 Code
    TO-220AB
  • Drain-source On Resistance-Max
    0.55 Ω
  • Pulsed Drain Current-Max (IDM)
    40 A
  • DS Breakdown Voltage-Min
    400 V
  • Avalanche Energy Rating (Eas)
    520 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    125 W
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