SQJQ160E-T1_GE3

Vishay Intertechnologies SQJQ160E-T1_GE3

Part No:

SQJQ160E-T1_GE3

Package:

-

AINNX NO:

68722224-SQJQ160E-T1_GE3

Description:

Description: Power Field-Effect Transistor, 602A I(D), 60V, 0.00085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Products specifications
  • Factory Lead Time
    25 Weeks
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    4
  • Transistor Element Material
    SILICON
  • Exterior Housing Material
    1
  • Rohs Code
    Yes
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    VISHAY INTERTECHNOLOGY INC
  • Drain Current-Max (ID)
    602 A
  • Operating Temperature-Max
    175 °C
  • Operating Temperature-Min
    -55 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE
  • Turn-off Time-Max (toff)
    119 ns
  • Turn-on Time-Max (ton)
    57 ns
  • Type of module
    diode-thyristor
  • Semiconductor structure
    double series
  • Max. off-state voltage
    1.8kV
  • Case
    SEMIPACK3
  • Max. forward voltage
    1.6V
  • Max. forward impulse current
    9kA
  • Gate current
    150mA
  • Electrical mounting
    screw
  • Mechanical mounting
    screw
  • ECCN Code
    EAR99
  • Terminal Position
    SINGLE
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Reference Standard
    AEC-Q101
  • JESD-30 Code
    R-PSSO-G4
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Polarity/Channel Type
    N-CHANNEL
  • Drain-source On Resistance-Max
    0.00085 Ω
  • Pulsed Drain Current-Max (IDM)
    655 A
  • DS Breakdown Voltage-Min
    60 V
  • Avalanche Energy Rating (Eas)
    288 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    600 W
  • Feedback Cap-Max (Crss)
    458 pF
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