SQ2337ES-T1_GE3

Vishay Intertechnologies SQ2337ES-T1_GE3

Part No:

SQ2337ES-T1_GE3

Package:

-

AINNX NO:

68722406-SQ2337ES-T1_GE3

Description:

Small Signal Field-Effect Transistor, 2.2A I(D), 80V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3

Products specifications
  • Factory Lead Time
    23 Weeks, 4 Days
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • Exterior Housing Material
    1
  • Type of enclosure
    shielding
  • Dimension X
    156.3mm
  • Dimension Y
    225mm
  • Dimension Z
    87mm
  • Enclosure material
    aluminium
  • Enclosure description
    EMI/RFI shielding,
  • Enclosures application
    designed for electronic circuits sensitive to electromagnetic interferences
  • Enclosure series
    AW
  • Version
    with fixing lugs
  • Dimensions
    See
  • Rohs Code
    Yes
  • Part Life Cycle Code
    End Of Life
  • Ihs Manufacturer
    VISHAY INTERTECHNOLOGY INC
  • Package Description
    SMALL OUTLINE, R-PDSO-G3
  • Drain Current-Max (ID)
    2.2 A
  • Operating Temperature-Max
    175 °C
  • Operating Temperature-Min
    -55 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE
  • Turn-off Time-Max (toff)
    39 ns
  • Turn-on Time-Max (ton)
    23 ns
  • ECCN Code
    EAR99
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Reach Compliance Code
    compliant
  • Reference Standard
    AEC-Q101
  • JESD-30 Code
    R-PDSO-G3
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Polarity/Channel Type
    P-CHANNEL
  • JEDEC-95 Code
    TO-236AB
  • Drain-source On Resistance-Max
    0.29 Ω
  • Pulsed Drain Current-Max (IDM)
    9 A
  • DS Breakdown Voltage-Min
    80 V
  • Avalanche Energy Rating (Eas)
    6 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    3 W
  • Feedback Cap-Max (Crss)
    38 pF
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