SI8851EDB-T2-E1

Vishay Intertechnologies SI8851EDB-T2-E1

Part No:

SI8851EDB-T2-E1

Package:

-

AINNX NO:

68722417-SI8851EDB-T2-E1

Description:

Power Field-Effect Transistor

Products specifications
  • Factory Lead Time
    16 Weeks
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    30
  • Transistor Element Material
    SILICON
  • Exterior Housing Material
    1
  • Type of enclosure
    multipurpose
  • Dimension X
    208mm
  • Dimension Y
    208mm
  • Dimension Z
    56mm
  • Enclosure series
    AUG
  • Enclosure material
    aluminium
  • Body colour
    black
  • Side colour
    grey
  • Dimensions
    See
  • Rohs Code
    Yes
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    VISHAY INTERTECHNOLOGY INC
  • Package Description
    GRID ARRAY, R-PBGA-B30
  • Operating Temperature-Max
    150 °C
  • Operating Temperature-Min
    -55 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY
  • ECCN Code
    EAR99
  • Terminal Position
    BOTTOM
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    BALL
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    compliant
  • JESD-30 Code
    R-PBGA-B30
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    P-CHANNEL
  • Drain-source On Resistance-Max
    0.0086 Ω
  • Pulsed Drain Current-Max (IDM)
    80 A
  • DS Breakdown Voltage-Min
    20 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
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