SI7489DP-T1-GE3

Vishay Intertechnologies SI7489DP-T1-GE3

Part No:

SI7489DP-T1-GE3

Package:

-

AINNX NO:

68721369-SI7489DP-T1-GE3

Description:

Power Field-Effect Transistor

Products specifications
  • Factory Lead Time
    11 Weeks, 1 Day
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Material
    brush - graphite; conductor - copper; clamp - brass
  • Number of Terminals
    8
  • Transistor Element Material
    SILICON
  • Exterior Housing Material
    1
  • Gross weight
    5.26
  • Transport packaging size/quantity
    41*29*36/1000
  • Wire length
    (L) - mm
  • Rohs Code
    Yes
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    VISHAY INTERTECHNOLOGY INC
  • Package Description
    POWERPAK SO-8
  • Drain Current-Max (ID)
    28 A
  • Operating Temperature-Max
    150 °C
  • Operating Temperature-Min
    -55 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE
  • Turn-off Time-Max (toff)
    315 ns
  • Turn-on Time-Max (ton)
    55 ns
  • JESD-609 Code
    e3
  • ECCN Code
    EAR99
  • Type
    graphite brush for collector motor with spring
  • Terminal Finish
    Matte Tin (Sn) - annealed
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    FLAT
  • Peak Reflow Temperature (Cel)
    260
  • Depth
    (D) - 17 mm
  • Reach Compliance Code
    compliant
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PDSO-F8
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    P-CHANNEL
  • Drain-source On Resistance-Max
    0.041 Ω
  • Pulsed Drain Current-Max (IDM)
    40 A
  • DS Breakdown Voltage-Min
    100 V
  • Avalanche Energy Rating (Eas)
    61 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    83 W
  • Saturation Current
    1
  • Height
    (H) - 8 mm
  • Width
    (W) - 14.4 mm
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