SI3469DV-T1-GE3

Vishay SI3469DV-T1-GE3

Part No:

SI3469DV-T1-GE3

Manufacturer:

Vishay

Package:

-

AINNX NO:

69822538-SI3469DV-T1-GE3

Description:

Trans Mosfet P-ch 20V 5A 6-PIN TSOP T/r

Products specifications
  • Mount
    Surface Mount
  • Number of Pins
    6
  • Weight
    19.986414 mg
  • Case/Package
    TSOP
  • Fall Time
    35 ns
  • RoHS
    Compliant
  • Turn Off Delay Time

    It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

    50 ns
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Digi-Reel®
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150 °C
  • Min Operating Temperature
    -55 °C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    1.14 W
  • Number of Channels
    1
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    1.14 W
  • Turn On Delay Time

    Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

    10 ns
  • Rise Time

    In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

    12 ns
  • Drain to Source Voltage (Vdss)
    -20 V
  • Threshold Voltage
    -1 V
  • Gate to Source Voltage (Vgs)
    20 V
  • Drain to Source Breakdown Voltage
    -20 V
  • Rds On Max
    30 mΩ
  • Nominal Vgs
    -1 V
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • REACH SVHC
    Unknown
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