SI7143DP-T1-GE3

Vishay Intertechnologies SI7143DP-T1-GE3

Part No:

SI7143DP-T1-GE3

Package:

-

AINNX NO:

68721315-SI7143DP-T1-GE3

Description:

Description: Power Field-Effect Transistor

Products specifications
  • Factory Lead Time
    18 Weeks
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Housing material
    Nylon 66 UL94V-0
  • Number of Terminals
    5
  • Transistor Element Material
    SILICON
  • Exterior Housing Material
    1
  • Rohs Code
    Yes
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    VISHAY INTERTECHNOLOGY INC
  • Package Description
    HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
  • Drain Current-Max (ID)
    35 A
  • Operating Temperature-Max
    150 °C
  • Package Body Material
    UNSPECIFIED
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE
  • Gross Weight
    1.91
  • Transport packaging size/quantity
    48*32*27/10000
  • Cable type
    interboard power cable (socket) series 1007
  • Wire cross-section
    0.129 mm2
  • Wire insulation color
    red, black
  • Wire length
    280 mm
  • Mating part
    W-02 pitch 2.54mm
  • Number of wires
    2
  • JESD-609 Code
    e3
  • ECCN Code
    EAR99
  • Connector type
    C3
  • Terminal Finish
    Matte Tin (Sn)
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    C BEND
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    compliant
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-XDSO-C5
  • Number of contacts
    2
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    P-CHANNEL
  • Operating temperature range
    0…+80 °C
  • Drain-source On Resistance-Max
    0.01 Ω
  • Pulsed Drain Current-Max (IDM)
    60 A
  • DS Breakdown Voltage-Min
    30 V
  • Avalanche Energy Rating (Eas)
    31.25 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    35.7 W
  • Connector pitch
    2.54 mm
  • Saturation Current
    1
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