SI6955DQ-T1

Vishay SI6955DQ-T1

Part No:

SI6955DQ-T1

Manufacturer:

Vishay

Package:

-

AINNX NO:

69823656-SI6955DQ-T1

Description:

Small Signal Field-Effect Transistor

Products specifications
  • Weight
    19.986414 mg
  • Case/Package
    TSSOP
  • Fall Time
    8 ns
  • RoHS
    Non-Compliant
  • Turn Off Delay Time

    It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

    14 ns
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150 °C
  • Min Operating Temperature
    -55 °C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    1 W
  • Number of Channels
    2
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Dual
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    1 W
  • Turn On Delay Time

    Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

    7 ns
  • Rise Time

    In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

    9 ns
  • Drain to Source Voltage (Vdss)
    -30 V
  • Continuous Drain Current (ID)
    2.5 A
  • Gate to Source Voltage (Vgs)
    20 V
  • Drain to Source Resistance
    85 mΩ
  • Height
    1 mm
  • Length
    3 mm
  • Width
    4.4 mm
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