SI7478DP-T1-GE3

Vishay Intertechnologies SI7478DP-T1-GE3

Part No:

SI7478DP-T1-GE3

Package:

-

AINNX NO:

68721312-SI7478DP-T1-GE3

Description:

Power Field-Effect Transistor

Products specifications
  • Factory Lead Time
    13 Weeks
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    5
  • Transistor Element Material
    SILICON
  • Exterior Housing Material
    1
  • Gross Weight
    0.80
  • Transport Package Size/Quantity
    40*40*35/500
  • Noal Current
    3min
  • Rohs Code
    Yes
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    VISHAY INTERTECHNOLOGY INC
  • Package Description
    HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
  • Drain Current-Max (ID)
    15 A
  • Operating Temperature-Max
    150 °C
  • Package Body Material
    UNSPECIFIED
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    0…+40 °C
  • JESD-609 Code
    e3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn) - annealed
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    C BEND
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    compliant
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-XDSO-C5
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Number of Contacts
    2
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Polarity/Channel Type
    N-CHANNEL
  • Drain-source On Resistance-Max
    0.0075 Ω
  • Pulsed Drain Current-Max (IDM)
    60 A
  • DS Breakdown Voltage-Min
    60 V
  • Avalanche Energy Rating (Eas)
    61 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    5.4 W
  • Saturation Current
    1
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