IRFPE40

Vishay IRFPE40

Part No:

IRFPE40

Manufacturer:

Vishay

Package:

-

AINNX NO:

69823748-IRFPE40

Description:

Mosfet N-ch 800V 5.4A TO-247AC

Products specifications
  • Mount
    Through Hole
  • Number of Pins
    3
  • Weight
    38.000013 g
  • Case/Package
    TO-247-3
  • Fall Time
    32 ns
  • Turn Off Delay Time

    It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

    100 ns
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Bulk
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150 °C
  • Min Operating Temperature
    -55 °C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    150 W
  • Number of Channels
    1
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Turn On Delay Time

    Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

    16 ns
  • Rise Time

    In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

    36 ns
  • Drain to Source Voltage (Vdss)
    800 V
  • Continuous Drain Current (ID)
    5.4 A
  • Threshold Voltage
    4 V
  • Gate to Source Voltage (Vgs)
    20 V
  • Drain to Source Breakdown Voltage
    800 V
  • Input Capacitance

    The capacitance between the input terminals of an op amp with either input grounded. It is expressed in units of farads.

    1.9 nF
  • Drain to Source Resistance
    2 Ω
  • Rds On Max
    2 Ω
  • Nominal Vgs
    4 V
  • Height
    20.7 mm
  • Length
    15.87 mm
  • Width
    5.31 mm
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • REACH SVHC
    Unknown
  • Lead Free
    Contains Lead
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