IRFBE30SPBF

Vishay Intertechnologies IRFBE30SPBF

Part No:

IRFBE30SPBF

Package:

-

AINNX NO:

68722428-IRFBE30SPBF

Description:

Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

Products specifications
  • Factory Lead Time
    12 Weeks
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Material
    silicone
  • Number of Terminals
    2
  • Transistor Element Material
    SILICON
  • Exterior Housing Material
    1
  • Rohs Code
    Yes
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    VISHAY INTERTECHNOLOGY INC
  • Package Description
    SMALL OUTLINE, R-PSSO-G2
  • Drain Current-Max (ID)
    4.1 A
  • Operating Temperature-Max
    150 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE
  • Type of enclosures accessories
    case ring
  • Enclosure series
    LC
  • Related items
    TKC-LC135,
  • Frame colour
    light grey
  • Quantity in set/package
    2pcs.
  • JESD-609 Code
    e3
  • Pbfree Code
    Yes
  • ECCN Code
    EAR99
  • Terminal Finish
    MATTE TIN
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    AVALANCHE RATED
  • Terminal Position
    SINGLE
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    compliant
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count

    a count of all of the component leads (or pins)

    3
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL
  • Drain-source On Resistance-Max
    3 Ω
  • Pulsed Drain Current-Max (IDM)
    16 A
  • DS Breakdown Voltage-Min
    800 V
  • Avalanche Energy Rating (Eas)
    260 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    125 W
  • Saturation Current
    1
0 Similar Products Remaining
Documents & Media Download datasheets and manufacturer documentation for Vishay Intertechnologies IRFBE30SPBF.