IRF9540

Vishay Intertechnologies IRF9540

Part No:

IRF9540

Package:

-

AINNX NO:

68716170-IRF9540

Description:

Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    NO
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • Exterior Housing Material
    1
  • Rohs Code
    No
  • Part Life Cycle Code
    Obsolete
  • Ihs Manufacturer
    VISHAY INTERTECHNOLOGY INC
  • Drain Current-Max (ID)
    19 A
  • Operating Temperature-Max
    175 °C
  • Operating Temperature-Min
    -55 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    FLANGE MOUNT
  • Chip
    HD44780
  • Description
    Character LCD display 1602
  • Support
    does not support Cyrillic
  • Characteristics
    display - 2 lines of 16 characters (matrix 5 x 8 points), blue backlight
  • Current consumption
    not more than 2; backlight - 45 mA
  • JESD-609 Code
    e0
  • Pbfree Code
    No
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN LEAD
  • Terminal Position
    SINGLE
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    THROUGH-HOLE
  • Depth
    82 mm
  • Reach Compliance Code
    unknown
  • JESD-30 Code
    R-PSFM-T3
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    P-CHANNEL
  • JEDEC-95 Code
    TO-220AB
  • Drain-source On Resistance-Max
    0.2 Ω
  • Pulsed Drain Current-Max (IDM)
    76 A
  • DS Breakdown Voltage-Min
    100 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    150 W
  • Height
    18 mm
  • Width
    35 mm
0 Similar Products Remaining