SI4850EY-T1

Vishay SI4850EY-T1

Part No:

SI4850EY-T1

Manufacturer:

Vishay

Datasheet:

-

Package:

-

AINNX NO:

69860542-SI4850EY-T1

Description:

Power Field-Effect Transistor

Products specifications
  • Mount
    Surface Mount
  • Number of Pins
    8
  • Weight
    506.605978 mg
  • Case/Package
    SO
  • Fall Time
    10 ns
  • Number of Elements
    1
  • RoHS
    Non-Compliant
  • Turn Off Delay Time

    It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

    25 ns
  • Voltage Rating (DC)
    60 V
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150 °C
  • Min Operating Temperature
    -55 °C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    1.7 W
  • Number of Channels
    1
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    1.7 W
  • Turn On Delay Time

    Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

    10 ns
  • Rise Time

    In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

    10 ns
  • Drain to Source Voltage (Vdss)
    60 V
  • Forward Voltage

    the amount of voltage needed to get current to flow across a diode.

    800 mV
  • Continuous Drain Current (ID)
    6 A
  • Gate to Source Voltage (Vgs)
    20 V
  • Drain to Source Breakdown Voltage
    60 V
  • Drain to Source Resistance
    22 mΩ
  • Rds On Max
    22 mΩ
  • Height
    1.55 mm
  • Length
    5 mm
  • Width
    4 mm
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