Vishay SI2301CDS-T1-GE3

Contact Plating

Contact plating (finish) provides corrosion protection for base metals and optimizes the mechanical and electrical properties of the contact interfaces.

Tin

Mount

Surface Mount

Number of Pins

3

Weight

1.437803 g

Case/Package

SOT-23

Fall Time

35 ns

Number of Elements

1

RoHS

Compliant

Schedule B

8541210080, 8541210080|8541210080, 8541210080|8541210080|8541210080, 8541210080|8541210080|8541210080|8541210080

Turn Off Delay Time

It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

30 ns

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Cut Tape

Resistance

112 mΩ

Max Operating Temperature

The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

150 °C

Min Operating Temperature

-55 °C

Max Power Dissipation

The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

860 mW

Number of Channels

1

Element Configuration

The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

Single

Power Dissipation

the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

1.6 W

Turn On Delay Time

Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

11 ns

Rise Time

In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

35 ns

Drain to Source Voltage (Vdss)

-20 V

Continuous Drain Current (ID)

-3.1 A

Threshold Voltage

-1 V

Gate to Source Voltage (Vgs)

8 V

Drain to Source Breakdown Voltage

-20 V

Input Capacitance

The capacitance between the input terminals of an op amp with either input grounded. It is expressed in units of farads.

405 pF

Max Junction Temperature (Tj)

150 °C

Drain to Source Resistance

90 mΩ

Rds On Max

112 mΩ

Nominal Vgs

-400 mV

Height

1.12 mm

Length

3.04 mm

Width

1.4 mm

Radiation Hardening

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

No

REACH SVHC

No SVHC

Lead Free

Lead Free