MagnaChip MDQ16N50GTP

Mount

Through Hole

Number of Pins

3

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

Unknown

PPAP

Unknown

Category

Power MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

500

Maximum Gate Source Voltage (V)

±30

Maximum Gate Threshold Voltage (V)

5

Maximum Continuous Drain Current (A)

16.5

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Typical Gate Charge @ Vgs (nC)

34.9@10V

Typical Gate Charge @ 10V (nC)

34.9

Typical Input Capacitance @ Vds (pF)

1724@25V

Maximum Power Dissipation (mW)

215000

Typical Fall Time (ns)

41

Typical Rise Time (ns)

88.5

Typical Turn-Off Delay Time (ns)

96.5

Typical Turn-On Delay Time (ns)

46

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

Through Hole

Package Height

21.46(Max)

Package Width

5.31(Max)

Package Length

16.26(Max)

PCB changed

3

Tab

Tab

Standard Package Name

TO-247

Supplier Package

TO-247

Lead Shape

Through Hole

Number of Elements

1

RoHS

Compliant

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tube

Part Status

Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

Unconfirmed

Max Operating Temperature

The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

150 °C

Min Operating Temperature

-55 °C

Pin Count

a count of all of the component leads (or pins)

3

Configuration

Single

Power Dissipation

the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

215 W

Continuous Drain Current (ID)

16.5 A

Gate to Source Voltage (Vgs)

30 V

Channel Type

N

Radiation Hardening

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

No