MDF1933TH

MagnaChip MDF1933TH

Part No:

MDF1933TH

Manufacturer:

MagnaChip

Datasheet:

-

Package:

-

AINNX NO:

31977036-MDF1933TH

Description:

Products specifications
  • Material
    Si
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Automotive
    Unknown
  • PPAP
    Unknown
  • Category
    Power MOSFET
  • Process Technology
    TMOS
  • Channel Mode
    Enhancement
  • Number of Elements per Chip
    1
  • Maximum Drain Source Voltage (V)
    80
  • Maximum Gate Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    4
  • Maximum Continuous Drain Current (A)
    43
  • Maximum Gate Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain Source Resistance (mOhm)
    7.5@10V
  • Typical Gate Charge @ Vgs (nC)
    59.4@10V
  • Typical Gate Charge @ 10V (nC)
    59.4
  • Typical Input Capacitance @ Vds (pF)
    3841@40V
  • Maximum Power Dissipation (mW)
    27700
  • Typical Fall Time (ns)
    15.1
  • Typical Rise Time (ns)
    32.7
  • Typical Turn-Off Delay Time (ns)
    24.2
  • Typical Turn-On Delay Time (ns)
    15.6
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Mounting
    Through Hole
  • Package Height
    16.13(Max)
  • Package Width
    4.93(Max)
  • Package Length
    10.71(Max)
  • PCB changed
    3
  • Tab
    Tab
  • Standard Package Name
    TO-220
  • Supplier Package
    TO-220F
  • Lead Shape
    Through Hole
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Unconfirmed
  • Pin Count

    a count of all of the component leads (or pins)

    3
  • Configuration
    Single
  • Channel Type
    N
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