MagnaChip MDF3N50TH

Mount

Through Hole

Mounting Type

Through Hole

Number of Pins

3

EU RoHS

Supplier Unconfirmed

ECCN (US)

EAR99

Automotive

Unknown

PPAP

Unknown

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

500

Maximum Gate Threshold Voltage (V)

5

Typical Gate Charge @ Vgs (nC)

6.8

Mounting

Through Hole

Package Height

16.13(Max)

Package Width

4.93(Max)

Package Length

10.71(Max)

PCB changed

3

Tab

Tab

Standard Package Name

TO-220

Supplier Package

TO-220F

RoHS

Compliant

Turn Off Delay Time

It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

14.6 ns

Package Type

TO-220F

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+150 °C

Minimum Operating Temperature

-55 °C

Channel Mode

Enhancement

Part Status

Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

Unconfirmed

Max Operating Temperature

The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

150 °C

Min Operating Temperature

-55 °C

Max Power Dissipation

The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

30.5 W

Pin Count

a count of all of the component leads (or pins)

3

Configuration

Single

Element Configuration

The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

Single

Turn On Delay Time

Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

9 ns

Continuous Drain Current (ID)

2.8 A

Gate to Source Voltage (Vgs)

30 V

Input Capacitance

The capacitance between the input terminals of an op amp with either input grounded. It is expressed in units of farads.

285 pF

Channel Type

N

Drain to Source Resistance

2.5 Ω

Width

4.93 mm

Height

16.13 mm

Length

10.71 mm

Radiation Hardening

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

No