TTA006B,Q

Toshiba Semiconductor and Storage TTA006B,Q

Part No:

TTA006B,Q

Datasheet:

-

Package:

TO-225AA, TO-126-3

AINNX NO:

28804268-TTA006B,Q

Description:

PB-F POWER TRANSISTOR TO-126N PC

Products specifications
  • Mounting Type
    Through Hole
  • Package / Case
    TO-225AA, TO-126-3
  • Supplier Device Package
    TO-126N
  • Mfr
    Toshiba Semiconductor and Storage
  • Package
    Tray
  • Product Status
    Active
  • Current-Collector (Ic) (Max)
    1 A
  • Emitter- Base Voltage VEBO
    5 V
  • Pd - Power Dissipation
    1.5 W
  • Transistor Polarity
    PNP
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 150 C
  • DC Collector/Base Gain hfe Min
    100
  • Unit Weight
    0.029630 oz
  • Minimum Operating Temperature
    -
  • Factory Pack QuantityFactory Pack Quantity
    250
  • Mounting Styles
    Through Hole
  • Gain Bandwidth Product fT
    70 MHz
  • Manufacturer
    Toshiba
  • Brand
    Toshiba
  • Maximum DC Collector Current
    2 A
  • DC Current Gain hFE Max
    320
  • RoHS
    Details
  • Collector- Emitter Voltage VCEO Max
    230 V
  • Series
    -
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    150°C (TJ)
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tray
  • Subcategory
    Transistors
  • Technology
    Si
  • Configuration
    Single
  • Power - Max
    1.5 W
  • Product Type

    a group of products which fulfill a similar need for a market segment or market as a whole.

    BJTs - Bipolar Transistors
  • Transistor Type
    PNP
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 100mA, 5V
  • Current - Collector Cutoff (Max)
    200nA (ICBO)
  • Vce Saturation (Max) @ Ib, Ic
    1.5V @ 50mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max)
    230 V
  • Frequency - Transition
    70MHz
  • Collector Base Voltage (VCBO)
    230 V
  • Continuous Collector Current
    - 1 A
  • Product Category

    a particular group of related products.

    Bipolar Transistors - BJT
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