2SC3324-BL(TE85L,F

Toshiba Semiconductor and Storage 2SC3324-BL(TE85L,F

Part No:

2SC3324-BL(TE85L,F

Datasheet:

-

Package:

TO-236-3, SC-59, SOT-23-3

ROHS:

AINNX NO:

6309548-2SC3324-BL(TE85L,F

Description:

Trans GP BJT NPN 120V 0.1A 3-Pin S-Mini T/R

Products specifications
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Collector-Emitter Breakdown Voltage
    120V
  • Number of Elements
    1
  • hFEMin
    200
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    125°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Cut Tape (CT)
  • Published
    2009
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    150mW
  • Frequency
    100MHz
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    150mW
  • Gain Bandwidth Product

    The gain–bandwidth product (designated as GBWP, GBW, GBP, or GB) for an amplifier is the product of the amplifier's bandwidth and the gain at which the bandwidth is measured.

    100MHz
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    300mV
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    350 @ 2mA 6V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 1mA, 10mA
  • Max Breakdown Voltage
    120V
  • Collector Base Voltage (VCBO)
    120V
  • Emitter Base Voltage (VEBO)
    5V
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    RoHS Compliant
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