Toshiba Semiconductor and Storage 2SA2061(TE85L,F)

Factory Lead Time

12 Weeks

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Surface Mount

having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

YES

Supplier Device Package

TSM

Mfr

Toshiba Semiconductor and Storage

Product Status

Active

Current-Collector (Ic) (Max)

2.5 A

Emitter- Base Voltage VEBO

7 V

Pd - Power Dissipation

625 mW

Transistor Polarity

PNP

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 150 C

DC Collector/Base Gain hfe Min

200

Unit Weight

0.000353 oz

Minimum Operating Temperature

-

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Gain Bandwidth Product fT

-

Manufacturer

Toshiba

Brand

Toshiba

Maximum DC Collector Current

2.5 A

DC Current Gain hFE Max

500

RoHS

Details

Collector- Emitter Voltage VCEO Max

20 V

Package Description

,

Operating Temperature-Max

150 °C

Rohs Code

Yes

Manufacturer Part Number

2SA2061(TE85L,F)

Part Life Cycle Code

Active

Ihs Manufacturer

TOSHIBA CORP

Risk Rank

5.57

Series

-

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

150°C (TJ)

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

MouseReel

Subcategory

Transistors

Reach Compliance Code

unknown

Configuration

Single

Power - Max

625 mW

Polarity/Channel Type

PNP

Product Type

a group of products which fulfill a similar need for a market segment or market as a whole.

BJTs - Bipolar Transistors

Transistor Type

PNP

DC Current Gain (hFE) (Min) @ Ic, Vce

200 @ 500mA, 2V

Current - Collector Cutoff (Max)

100nA (ICBO)

Vce Saturation (Max) @ Ib, Ic

190mV @ 53mA, 1.6A

Voltage - Collector Emitter Breakdown (Max)

20 V

Frequency - Transition

-

Collector Base Voltage (VCBO)

20 V

Power Dissipation-Max (Abs)

1 W

Collector Current-Max (IC)

2.5 A

DC Current Gain-Min (hFE)

200

Continuous Collector Current

- 2.5 A

Product Category

a particular group of related products.

Bipolar Transistors - BJT