2SC2655-Y(TE6,F,M)

Toshiba Semiconductor and Storage 2SC2655-Y(TE6,F,M)

Part No:

2SC2655-Y(TE6,F,M)

Datasheet:

2SC2655

Package:

TO-226-3, TO-92-3 Long Body

ROHS:

AINNX NO:

6318760-2SC2655-Y(TE6,F,M)

Description:

Trans GP BJT NPN 50V 2A 3-Pin LSTM T/R

Products specifications
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 Long Body
  • Number of Pins
    3
  • Supplier Device Package
    TO-92MOD
  • Current-Collector (Ic) (Max)
    2A
  • hFEMin
    70
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    150°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Bulk
  • Published
    2006
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150°C
  • Min Operating Temperature
    -55°C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    900mW
  • Polarity
    NPN
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Power - Max
    900mW
  • Gain Bandwidth Product

    The gain–bandwidth product (designated as GBWP, GBW, GBP, or GB) for an amplifier is the product of the amplifier's bandwidth and the gain at which the bandwidth is measured.

    100MHz
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    50V
  • Max Collector Current
    2A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    70 @ 500mA 2V
  • Current - Collector Cutoff (Max)
    1μA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 50mA, 1A
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Frequency - Transition
    100MHz
  • Collector Base Voltage (VCBO)
    50V
  • Emitter Base Voltage (VEBO)
    5V
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    RoHS Compliant
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