Factory Lead Time
18 Weeks
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.
YES
Supplier Device Package
PW-MOLD
Number of Terminals
2
Transistor Element Material
SILICON
Mfr
Toshiba Semiconductor and Storage
Package
Tape & Reel (TR)
Product Status
Active
Current-Collector (Ic) (Max)
500 mA
Transistor Polarity
PNP
Factory Pack QuantityFactory Pack Quantity
2000
Manufacturer
Toshiba
Brand
Toshiba
RoHS
Details
Package Description
SMALL OUTLINE, R-PSSO-G2
Package Style
SMALL OUTLINE
Package Body Material
PLASTIC/EPOXY
Operating Temperature-Max
150 °C
Transition Frequency-Nom (fT)
35 MHz
Manufacturer Part Number
2SA2142(TE16L1,NQ)
Package Shape
RECTANGULAR
Number of Elements
1
Part Life Cycle Code
Active
Ihs Manufacturer
TOSHIBA CORP
Risk Rank
1.57
Series
-
Operating Temperature
The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.
150°C (TJ)
Packaging
Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.
Reel
Subcategory
Transistors
Technology
Si
Terminal Position
SINGLE
Terminal Form
Occurring at or forming the end of a series, succession, or the like; closing; concluding.
GULL WING
Reach Compliance Code
unknown
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE
Power Dissipation
the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.
15
Case Connection
COLLECTOR
Power - Max
1 W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Product Type
a group of products which fulfill a similar need for a market segment or market as a whole.
BJTs - Bipolar Transistors
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 50mA, 5V
Current - Collector Cutoff (Max)
10μA (ICBO)
Vce Saturation (Max) @ Ib, Ic
1V @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
600 V
Transition Frequency
35
Frequency - Transition
35MHz
Power Dissipation-Max (Abs)
15 W
Collector Current-Max (IC)
0.5 A
DC Current Gain-Min (hFE)
100
Continuous Collector Current
500
Collector-Emitter Voltage-Max
600 V
VCEsat-Max
1 V
Power Dissipation Ambient-Max
1 W
Product Category
a particular group of related products.
Bipolar Transistors - BJT