CSD85301Q2

Texas Instruments CSD85301Q2

Part No:

CSD85301Q2

Manufacturer:

Texas Instruments

Datasheet:

-

Package:

6-WDFN Exposed Pad

ROHS:

AINNX NO:

6377479-CSD85301Q2

Description:

MOSFET 2N-CH 20V 5A 6WSON

Products specifications
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    6 Weeks
  • Contact Plating

    Contact plating (finish) provides corrosion protection for base metals and optimizes the mechanical and electrical properties of the contact interfaces.

    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-WDFN Exposed Pad
  • Number of Pins
    6
  • Weight
    9.695537mg
  • Transistor Element Material
    SILICON
  • Number of Elements
    2
  • Turn Off Delay Time

    It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

    14 ns
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C~150°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Series
    NexFET™
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    AVALANCHE RATED
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    2.3W
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    NO LEAD
  • Base Part Number
    CSD85301
  • Number of Channels
    2
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Dual
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Turn On Delay Time

    Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

    6 ns
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    27m Ω @ 5A, 4.5V
  • Vgs(th) (Max) @ Id
    1.2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    469pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    5.4nC @ 4.5V
  • Rise Time

    In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

    26ns
  • Drain to Source Voltage (Vdss)
    20V
  • Fall Time (Typ)
    15 ns
  • Continuous Drain Current (ID)
    5A
  • Gate to Source Voltage (Vgs)
    10V
  • Drain Current-Max (Abs) (ID)
    5A
  • Drain-source On Resistance-Max
    0.039Ohm
  • Avalanche Energy Rating (Eas)
    3.8 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate, 5V Drive
  • Height
    800μm
  • Length
    2mm
  • Width
    2mm
  • Thickness
    750μm
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
  • Lead Free
    Lead Free
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