CSD88537NDT

Texas Instruments CSD88537NDT

Part No:

CSD88537NDT

Manufacturer:

Texas Instruments

Datasheet:

-

Package:

8-SOIC (0.154, 3.90mm Width)

ROHS:

AINNX NO:

6380191-CSD88537NDT

Description:

TEXAS INSTRUMENTS CSD88537NDTDual MOSFET, Dual N Channel, 15 A, 60 V, 0.0125 ohm, 10 V, 3 V

Products specifications
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    6 Weeks
  • Contact Plating

    Contact plating (finish) provides corrosion protection for base metals and optimizes the mechanical and electrical properties of the contact interfaces.

    Gold
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    540.001716mg
  • Transistor Element Material
    SILICON
  • Current - Continuous Drain (Id) @ 25℃
    15A
  • Number of Elements
    2
  • Turn Off Delay Time

    It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

    5 ns
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C~150°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Series
    NexFET™
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    AVALANCHE RATED
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    2.1W
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    CSD88537
  • Number of Channels
    2
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Dual
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    2.1W
  • Turn On Delay Time

    Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

    6 ns
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    15m Ω @ 8A, 10V
  • Vgs(th) (Max) @ Id
    3.6V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1400pF @ 30V
  • Gate Charge (Qg) (Max) @ Vgs
    18nC @ 10V
  • Rise Time

    In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

    15ns
  • Fall Time (Typ)
    19 ns
  • Continuous Drain Current (ID)
    8A
  • Threshold Voltage
    3V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    8A
  • Drain-source On Resistance-Max
    0.019Ohm
  • Drain to Source Breakdown Voltage
    60V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Max Junction Temperature (Tj)
    150°C
  • FET Feature
    Standard
  • Height
    1.75mm
  • Length
    4.9mm
  • Width
    3.91mm
  • Thickness
    1.58mm
  • REACH SVHC
    No SVHC
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
  • Lead Free
    Lead Free
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