MagnaChip MME80R290PRH

EU RoHS

Compliant with Exemption

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

Unknown

PPAP

Unknown

Category

Power MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

800

Maximum Gate Source Voltage (V)

±30

Maximum Continuous Drain Current (A)

17

Typical Gate Charge @ Vgs (nC)

56@10V

Typical Gate Charge @ 10V (nC)

56

Typical Input Capacitance @ Vds (pF)

1830@25V

Maximum Power Dissipation (mW)

181000

Typical Fall Time (ns)

49

Typical Rise Time (ns)

56.5

Typical Turn-Off Delay Time (ns)

160

Typical Turn-On Delay Time (ns)

32

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Continuous Drain Current

17(A)

Drain-Source On-Volt

800(V)

Operating Temperature Classification

Military

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

±30(V)

Number of Elements

1

Rad Hardened

No

RoHS

Non-Compliant

Manufacturer Part Number

MME80R290PRH

Manufacturer

MagnaChip Semiconductor Ltd

Part Life Cycle Code

Active

Ihs Manufacturer

MAGNACHIP SEMICONDUCTOR LTD

Risk Rank

2.14

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tape and Reel

Part Status

Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

Active

Type

Power MOSFET

Reach Compliance Code

unknown

Polarity

N

Configuration

Single

Power Dissipation

the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

181(W)

Channel Type

N