EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
HTS
8541.29.00.95
SVHC
Yes
SVHC Exceeds Threshold
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Process Technology
HiperFET
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
150
Maximum Gate Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
150
Maximum Drain Source Resistance (MOhm)
13@10V
Typical Gate Charge @ Vgs (nC)
190@10V
Typical Gate Charge @ 10V (nC)
190
Typical Input Capacitance @ Vds (pF)
5800@25V
Maximum Power Dissipation (mW)
714000
Typical Fall Time (ns)
28
Typical Rise Time (ns)
33
Typical Turn-Off Delay Time (ns)
100
Typical Turn-On Delay Time (ns)
30
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Mounting
Through Hole
Package Height
21.46(Max)
Package Width
5.3(Max)
Package Length
16.26(Max)
PCB changed
3
Tab
Tab
Supplier Package
TO-247
Continuous Drain Current
150(A)
Drain-Source On-Volt
150(V)
Operating Temperature Classification
Military
Package Type
TO-247
Operating Temp Range
-55C to 175C
Gate-Source Voltage (Max)
±20(V)
Number of Elements
1
Rad Hardened
No
Part Status
Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.
Active
Type
Power MOSFET
Pin Count
a count of all of the component leads (or pins)
3
Polarity
N
Configuration
Single
Power Dissipation
the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.
714(W)
Channel Type
N