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IXFA26N50P3

Littelfuse IXFA26N50P3

Part No:

IXFA26N50P3

Manufacturer:

Datasheet:

Package:

TO-263-3

AINNX NO:

31974969-IXFA26N50P3

Category:

Transistors - FETs, MOSFETs - Arrays

Description:

Products specifications

Package / Case
TO-263-3
EU RoHS
Compliant
ECCN (US)
EAR99
HTS
8541.21.00.95
Automotive
No
PPAP
No
Category
Power MOSFET
Process Technology
HiperFET
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
500
Maximum Gate Source Voltage (V)
±30
Maximum Gate Threshold Voltage (V)
5
Maximum Continuous Drain Current (A)
26
Maximum Gate Source Leakage Current (nA)
100
Maximum IDSS (uA)
25
Maximum Drain Source Resistance (MOhm)
250@10V
Typical Gate Charge @ Vgs (nC)
42@10V
Typical Gate Charge @ 10V (nC)
42
Typical Input Capacitance @ Vds (pF)
2220@25V
Maximum Power Dissipation (mW)
500000
Typical Fall Time (ns)
5
Typical Rise Time (ns)
7
Typical Turn-Off Delay Time (ns)
38
Typical Turn-On Delay Time (ns)
21
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
Surface Mount
Package Height
4.83(Max)
Package Width
9.4(Max)
Package Length
10.41(Max)
PCB changed
2
Tab
Tab
Standard Package Name
TO-263
Supplier Package
D2PAK
Lead Shape
Gull-wing
Vds - Drain-Source Breakdown Voltage
500 V
Transistor Polarity
N-Channel
Mounting Styles
SMD/SMT
Rds On - Drain-Source Resistance
240 mOhms
Id - Continuous Drain Current
26 A
Part Status
Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.
Active
Technology
Si
Pin Count
a count of all of the component leads (or pins)
3
Configuration
Single
Number of Channels
1 Channel
Channel Type
N

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