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G5S6504Z

Global Power Technology-GPT G5S6504Z

Part No:

G5S6504Z

Datasheet:

-

Package:

8-PowerTDFN

AINNX NO:

28473565-G5S6504Z

Description:

DIODE SIL CARB 650V 15.45A 8DFN

Products specifications
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Supplier Device Package
    8-DFN (4.9x5.75)
  • Mfr
    Global Power Technology-GPT
  • Package
    Tape & Box (TB)
  • Product Status
    Active
  • Qc(nC),TJ=25℃
    10（VR=400V）
  • Ifsm(A),Tc=25℃
    24
  • IF(A),Tc=25℃
    12
  • IF(A),Tc=125℃
    5.7(135℃)
  • IF(A),Tc=160℃
    4（152℃）
  • Vrrm(V)
    650
  • Config.
    Single
  • Ptot(W),Tc=110℃
    22
  • Ptot(W),Tc=25℃
    52
  • Series
    -
  • Speed
    No Recovery Time > 500mA (Io)
  • Diode Type
    Silicon Carbide Schottky
  • Current - Reverse Leakage @ Vr
    50 μA @ 650 V
  • Voltage - Forward (Vf) (Max) @ If
    1.6 V @ 4 A
  • Operating Temperature - Junction
    -55°C ~ 175°C
  • Voltage - DC Reverse (Vr) (Max)
    650 V
  • Current - Average Rectified (Io)
    15.45A
  • Capacitance @ Vr, F
    181pF @ 0V, 1MHz
  • Reverse Recovery Time (trr)
    0 ns
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