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G5S12010D

Global Power Technology-GPT G5S12010D

Part No:

G5S12010D

Datasheet:

-

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

AINNX NO:

28473561-G5S12010D

Description:

DIODE SIL CARB 1.2KV 30.9A TO263

Products specifications
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package
    TO-263
  • Mfr
    Global Power Technology-GPT
  • Package
    Tape & Box (TB)
  • Product Status
    Active
  • Ptot(W),Tc=25℃
    120
  • Ptot(W),Tc=110℃
    52
  • Config.
    Single
  • Vrrm(V)
    1200
  • IF(A),Tc=160℃
    10(151℃)
  • IF(A),Tc=125℃
    13.7(135℃)
  • IF(A),Tc=25℃
    29.2
  • Ifsm(A),Tc=25℃
    120
  • Qc(nC),TJ=25℃
    55（VR=800V）
  • Series
    -
  • Speed
    No Recovery Time > 500mA (Io)
  • Diode Type
    Silicon Carbide Schottky
  • Current - Reverse Leakage @ Vr
    50 μA @ 1200 V
  • Voltage - Forward (Vf) (Max) @ If
    1.7 V @ 10 A
  • Operating Temperature - Junction
    -55°C ~ 175°C
  • Voltage - DC Reverse (Vr) (Max)
    1200 V
  • Current - Average Rectified (Io)
    30.9A
  • Capacitance @ Vr, F
    825pF @ 0V, 1MHz
  • Reverse Recovery Time (trr)
    0 ns
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