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G4S6508Z

Global Power Technology-GPT G4S6508Z

Part No:

G4S6508Z

Manufacturer:

Global Power Technology-GPT

Datasheet:

Package:

8-PowerTDFN

AINNX NO:

28487332-G4S6508Z

Category:

Diodes - Rectifiers - Single

Description:

DIODE SIL CARB 650V 30.5A 8DFN

Products specifications

Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
8-DFN (4.9x5.75)
Mfr
Global Power Technology-GPT
Package
Tape & Box (TB)
Product Status
Active
Qc(nC),TJ=25℃
21（VR=400V）
Ifsm(A),Tc=25℃
54
IF(A),Tc=25℃
23.2
IF(A),Tc=125℃
10.9（135℃）
IF(A),Tc=160℃
8（150.5℃）
Vrrm(V)
650
Config.
Single
Ptot(W),Tc=110℃
41
Ptot(W),Tc=25℃
94
Series
-
Speed
No Recovery Time > 500mA (Io)
Diode Type
Silicon Carbide Schottky
Current - Reverse Leakage @ Vr
50 μA @ 650 V
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 8 A
Operating Temperature - Junction
-55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
30.5A
Capacitance @ Vr, F
395pF @ 0V, 1MHz
Reverse Recovery Time (trr)
0 ns

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