All Products

Home /Discrete Semiconductor Products /Diodes - Rectifiers - Single /G3S12010H /

G3S12010H

Global Power Technology-GPT G3S12010H

Part No:

G3S12010H

Manufacturer:

Global Power Technology-GPT

Datasheet:

Package:

TO-220-2 Full Pack

AINNX NO:

28473601-G3S12010H

Category:

Diodes - Rectifiers - Single

Description:

DIODE SIC 1.2KV 16.5A TO220F

Products specifications

Mounting Type
Through Hole
Package / Case
TO-220-2 Full Pack
Supplier Device Package
TO-220F
Mfr
Global Power Technology-GPT
Product Status
Active
Package
TO-220F
IF(A) Tc=125℃
10（111°C）
Vrrm(V)
1200
IR（uA）Tj=25℃ typ
0.7
VF（V）Tj=175℃typ
2.35
VF（V）Tj=25℃ typ
1.55
Ifsm(A),Tc=25℃
140
IR（uA）Tj=25℃max
50
VF（V）Tj=175℃max
2.6
VF（V）Tj=25℃max
1.7
IF(A) Tc=25℃
16.5
IF(A),Tc=160℃
8.5（125°C）
Config.
Single Core
IR（uA）Tj=175℃typ
3
IR（uA）Tj=175℃max
100
Series
-
Speed
No Recovery Time > 500mA (Io)
Diode Type
Silicon Carbide Schottky
Current - Reverse Leakage @ Vr
50 μA @ 1200 V
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 10 A
Operating Temperature - Junction
-55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
16.5A
Capacitance @ Vr, F
765pF @ 0V, 1MHz
Reverse Recovery Time (trr)
0 ns

0 Similar Products Remaining