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G4S06506AT

Global Power Technology-GPT G4S06506AT

Part No:

G4S06506AT

Manufacturer:

Global Power Technology-GPT

Datasheet:

Package:

TO-220-2

AINNX NO:

28473978-G4S06506AT

Category:

Diodes - Rectifiers - Single

Description:

DIODE SIC 650V 11.6A TO220AC

Products specifications

Mounting Type
Through Hole
Package / Case
TO-220-2
Supplier Device Package
TO-220AC
Mfr
Global Power Technology-GPT
Product Status
Active
Package
TO-220AC
IR（uA）Tj=175℃max
100
IR（uA）Tj=25℃max
50
VF（V）Tj=175℃max
2.8
VF（V）Tj=25℃max
1.8
IF(A) Tc=25℃
11.6
IF(A),Tc=160℃
6(127°C）
IR（uA）Tj=175℃typ
0.65
IR（uA）Tj=25℃ typ
0.07
VF（V）Tj=175℃typ
2.45
VF（V）Tj=25℃ typ
1.68
Ifsm(A),Tc=25℃
35
IF(A) Tc=125℃
6.2
Series
-
Speed
No Recovery Time > 500mA (Io)
Diode Type
Silicon Carbide Schottky
Current - Reverse Leakage @ Vr
50 μA @ 650 V
Voltage - Forward (Vf) (Max) @ If
1.8 V @ 6 A
Operating Temperature - Junction
-55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
11.6A
Capacitance @ Vr, F
181pF @ 0V, 1MHz
Reverse Recovery Time (trr)
0 ns

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