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G4S06516BT

Global Power Technology-GPT G4S06516BT

Part No:

G4S06516BT

Datasheet:

-

Package:

TO-247-3

AINNX NO:

28473591-G4S06516BT

Description:

SIC SCHOTTKY DIODE 650V 16A 3-PI

Products specifications
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247AB
  • Mfr
    Global Power Technology-GPT
  • Package
    Tape & Box (TB)
  • Product Status
    Active
  • Current - Average Rectified (Io) (per Diode)
    25.9A (DC)
  • Ptot(W),Tc=25℃
  • Ptot(W),Tc=110℃
  • Config.
    Double
  • Vrrm(V)
    650
  • IF(A),Tc=160℃
    8*(154.5℃)
  • IF(A),Tc=125℃
    12*(135℃)
  • IF(A),Tc=25℃
  • Ifsm(A),Tc=25℃
  • Qc(nC),TJ=25℃
    21（VR=400V）
  • Series
    -
  • Speed
    No Recovery Time > 500mA (Io)
  • Diode Type
    Silicon Carbide Schottky
  • Current - Reverse Leakage @ Vr
    50 μA @ 650 V
  • Voltage - Forward (Vf) (Max) @ If
    1.7 V @ 8 A
  • Operating Temperature - Junction
    -55°C ~ 175°C
  • Voltage - DC Reverse (Vr) (Max)
    650 V
  • Diode Configuration
    1 Pair Common Cathode
  • Reverse Recovery Time (trr)
    0 ns
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