MRF151GB

Advanced MRF151GB

Part No:

MRF151GB

Manufacturer:

Advanced

Datasheet:

-

Package:

SOT-262A

AINNX NO:

53252861-MRF151GB

Description:

RF MOSFET Transistors RF Transistor

Products specifications
  • Package / Case
    SOT-262A
  • Vds - Drain-Source Breakdown Voltage
    125 V
  • Vgs th - Gate-Source Threshold Voltage
    5 V
  • Pd - Power Dissipation
    500 W
  • Transistor Polarity
    N-Channel
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 200 C
  • Vgs - Gate-Source Voltage
    40 V
  • Unit Weight
    0.001058 oz
  • Minimum Operating Temperature
    - 65 C
  • Mounting Styles
    SMD/SMT
  • Manufacturer
    Advanced Semiconductor, Inc.
  • Brand
    Advanced Semiconductor, Inc.
  • RoHS
    Details
  • Id - Continuous Drain Current
    40 A
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tray
  • Type
    RF Power MOSFET
  • Subcategory
    MOSFETs
  • Technology
    Si
  • Operating Frequency

    Operating frequency is the frequency at which the communications are being made with the total bandwidth occupied by the carrier signal with modulation. Usually bandwidth of the antenna will be wider than the bandwidth of the signal so that more than one center frequency the antenna can be put in to effective use.

    175 MHz
  • Configuration
    Dual
  • Product Type

    a group of products which fulfill a similar need for a market segment or market as a whole.

    RF MOSFET Transistors
  • Product Category

    a particular group of related products.

    RF MOSFET Transistors
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