AGR09090EF

Advanced AGR09090EF

Part No:

AGR09090EF

Manufacturer:

Advanced

Datasheet:

-

Package:

1111 (2828 Metric)

AINNX NO:

40039382-AGR09090EF

Description:

RF MOSFET Transistors 865-960MHz 105Watt Gain 17.8dB

Products specifications
  • Mounting Type
    Surface Mount, MLCC
  • Package / Case
    1111 (2828 Metric)
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    2
  • Transistor Element Material
    SILICON
  • Package
    Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
  • Mfr
    American Technical Ceramics
  • Product Status
    Active
  • Voltage Rated

    RATED voltage is the voltage on the nameplate - the "design point" for maximum power throughput and safe thermal operation.

    300V
  • Factory Pack QuantityFactory Pack Quantity
    10
  • Manufacturer
    Advanced Semiconductor, Inc.
  • Brand
    Advanced Semiconductor, Inc.
  • RoHS
    Details
  • Package Description
    FLANGE MOUNT, R-CDFM-F2
  • Package Style
    FLANGE MOUNT
  • Package Body Material
    CERAMIC, METAL-SEALED COFIRED
  • Reflow Temperature-Max (s)
    30
  • Operating Temperature-Max
    200 °C
  • Manufacturer Part Number
    AGR09090EF
  • Package Shape
    RECTANGULAR
  • Number of Elements
    1
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    BROADCOM LTD
  • Risk Rank
    5.31
  • Drain Current-Max (ID)
    8.5 A
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C ~ 125°C
  • Series
    Porcelain Superchip® ATC 100B
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tray
  • Size / Dimension
    0.110 L x 0.110 W (2.79mm x 2.79mm)
  • Tolerance
    ±5%
  • JESD-609 Code
    e0
  • ECCN Code
    EAR99
  • Temperature Coefficient

    The resistance-change factor per degree Celsius of temperature change is called the temperature coefficient of resistance. This factor is represented by the Greek lower-case letter “alpha” (α). A positive coefficient for a material means that its resistance increases with an increase in temperature.

    P90
  • Terminal Finish
    TIN LEAD
  • Applications
    RF, Microwave, High Frequency, Bypass, Decoupling
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    HIGH RELIABILITY
  • Capacitance
    180 pF
  • Subcategory
    MOSFETs
  • Technology
    Si
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    FLAT
  • Peak Reflow Temperature (Cel)
    225
  • Reach Compliance Code
    compliant
  • JESD-30 Code
    R-CDFM-F2
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Failure Rate

    the frequency with which an engineered system or component fails, expressed in failures per unit of time. It is usually denoted by the Greek letter λ (lambda) and is often used in reliability engineering.

    -
  • Lead Spacing

    the distance between two baselines of lines of type. The word 'leading' originates from the strips of lead hand-typesetters used to use to space out lines of text evenly. The word leading has stuck, but essentially it's a typographer's term for line spacing.

    -
  • Configuration
    SINGLE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Lead Style
    -
  • Case Connection
    SOURCE
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    N-CHANNEL
  • Product Type

    a group of products which fulfill a similar need for a market segment or market as a whole.

    RF MOSFET Transistors
  • Drain Current-Max (Abs) (ID)
    8.5 A
  • DS Breakdown Voltage-Min
    65 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    219 W
  • Highest Frequency Band
    ULTRA HIGH FREQUENCY BAND
  • Features
    High Q, Low Loss, Low ESL
  • Product Category

    a particular group of related products.

    RF MOSFET Transistors
  • Height Seated (Max)
    -
  • Thickness (Max)
    0.102 (2.59mm)
  • Ratings
    -
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