Advanced AGR09030EF

Surface Mount

having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

YES

Number of Terminals

2

Transistor Element Material

SILICON

Vds - Drain-Source Breakdown Voltage

65 V

Vgs th - Gate-Source Threshold Voltage

5 V

Pd - Power Dissipation

80 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 200 C

Vgs - Gate-Source Voltage

15 V

Minimum Operating Temperature

- 65 C

Manufacturer

Advanced Semiconductor, Inc.

Brand

Advanced Semiconductor, Inc.

RoHS

Details

Id - Continuous Drain Current

4.25 A

Package Description

FLANGE MOUNT, R-CDFM-F2

Package Style

FLANGE MOUNT

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Reflow Temperature-Max (s)

30

Operating Temperature-Max

200 °C

Manufacturer Part Number

AGR09030EF

Package Shape

RECTANGULAR

Number of Elements

1

Part Life Cycle Code

Active

Ihs Manufacturer

BROADCOM LTD

Risk Rank

5.2

Drain Current-Max (ID)

4.25 A

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tray

JESD-609 Code

e0

ECCN Code

EAR99

Type

RF Power MOSFET

Terminal Finish

TIN LEAD

Additional Feature

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

HIGH RELIABILITY

Subcategory

MOSFETs

Technology

Si

Terminal Position

DUAL

Terminal Form

Occurring at or forming the end of a series, succession, or the like; closing; concluding.

FLAT

Peak Reflow Temperature (Cel)

225

Reach Compliance Code

compliant

JESD-30 Code

R-CDFM-F2

Qualification Status

An indicator of formal certification of qualifications.

Not Qualified

Operating Frequency

Operating frequency is the frequency at which the communications are being made with the total bandwidth occupied by the carrier signal with modulation. Usually bandwidth of the antenna will be wider than the bandwidth of the signal so that more than one center frequency the antenna can be put in to effective use.

895 MHz

Configuration

Single

Operating Mode

A phase of operation during the operation and maintenance stages of the life cycle of a facility.

ENHANCEMENT MODE

Case Connection

SOURCE

Transistor Application

AMPLIFIER

Polarity/Channel Type

N-CHANNEL

Product Type

a group of products which fulfill a similar need for a market segment or market as a whole.

RF MOSFET Transistors

DS Breakdown Voltage-Min

65 V

FET Technology

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band

ULTRA HIGH FREQUENCY BAND

Product Category

a particular group of related products.

RF MOSFET Transistors