Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer+1
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Package / Case
Resistor - Base (R1)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Resistor - Emitter Base (R2)
Frequency - Transition
Power - Max
Continuous Collector Current
Packaging
- InventoryIn Stock
- MOQ1
- SPQ1
- Inventory27
- MOQ1
- SPQ1
- Inventory2721
- MOQ1
- SPQ1
- Inventory1808
- MOQ1
- SPQ1
- Inventory2723
- MOQ1
- SPQ1
- RN4606(TE85L,F)
Bipolar Transistors - Pre-Biased BRT PNP NPN 100mA -50V
manufacturer: Toshiba Semiconductor and Storage
- Inventory5890
- MOQ1
- SPQ1
- InventoryIn Stock
- MOQ1
- SPQ1
- Inventory21000
- MOQ1
- SPQ1
- RN4603(TE85L,F)
Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SM T/R
manufacturer: Toshiba Semiconductor and Storage
- Inventory1016
- MOQ1
- SPQ1
- InventoryIn Stock
- MOQ1
- SPQ1
- RN4982FE,LF(CT
Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
manufacturer: Toshiba Semiconductor and Storage
- Inventory3621
- MOQ1
- SPQ1
- Inventory2717
- MOQ1
- SPQ1
- RN1902,LF(CT
Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
manufacturer: Toshiba Semiconductor and Storage
- Inventory9000
- MOQ1
- SPQ1
- Inventory38
- MOQ1
- SPQ1
- Inventory38
- MOQ1
- SPQ1
- Inventory3216
- MOQ1
- SPQ1
- RN2911,LF
Trans GP BJT PNP 50V 0.1A 6-Pin US Embossed T/R
manufacturer: Toshiba Semiconductor and Storage
- Inventory21
- MOQ1
- SPQ1
- InventoryIn Stock
- MOQ1
- SPQ1
- Inventory131
- MOQ1
- SPQ1
- RN2906,LF
Trans GP BJT PNP 50V 0.1A 6-Pin US Embossed T/R
manufacturer: Toshiba Semiconductor and Storage
- Inventory4252
- MOQ1
- SPQ1