RN2603(TE85L,F)

Toshiba Semiconductor and Storage RN2603(TE85L,F)

Part No:

RN2603(TE85L,F)

Datasheet:

RN2601-06

Package:

SC-74, SOT-457

ROHS:

AINNX NO:

7836071-RN2603(TE85L,F)

Description:

TRANS 2PNP PREBIAS 0.3W SM6

Products specifications
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-74, SOT-457
  • Transistor Element Material
    SILICON
  • Collector-Emitter Breakdown Voltage
    50V
  • Number of Elements
    2
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Published
    2001
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    BUILT IN BIAS RESISTANCE RATIO IS 1
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    300mW
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PDSO-G6
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
  • Power - Max
    300mW
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    PNP
  • Transistor Type
    2 PNP - Pre-Biased (Dual)
  • Collector Emitter Voltage (VCEO)
    300mV
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    70 @ 10mA 5V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 250μA, 5mA
  • Transition Frequency
    200MHz
  • Max Breakdown Voltage
    50V
  • Frequency - Transition
    200MHz
  • Resistor - Base (R1)
    22k Ω
  • Resistor - Emitter Base (R2)
    22k Ω
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    RoHS Compliant
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